| 摘要 |
PURPOSE:To prevent the bulking of crystal grain at a neck part, and prevent the generation of neck-cut by connecting one end portion of a bonding wire of high purity gold containing specified wt.% of germanium and calcium to the outer terminal of a semiconductor chip, and connecting the other end-portion to a lead. CONSTITUTION:The connection side of a covered wire 5 to a first bonding side is subjected to conduction connection by ball bonding by forming a ball 5A1; on the outer hand, by thermosonic bonding, the connection to a second bonding side is subjected to conduction connection as a second bonding part 5A2, without previously eliminating a covered film 58. Material of a gold wire 5A of the covered wire 5 is high purity gold (Au) of e.g. 99.99wt.% or more which contains 0.03-0.3wt.% germanium-(Ge) and 0.0005-0.01wt.% calcium-(Ca). Thereby the bulking of crystal grain at a neck part at the time of ball forma tion can be prevented, and the generation of neck-cut can be prevented. |
