| 摘要 |
PROBLEM TO BE SOLVED: To improve wire bonding property by preventing deposition of a semiconductor to an electrode containing Au by making N (nitrogen) content of a second layer larger than N content of a third layer. SOLUTION: A TiN layer 13 which functions as a diffusion barrier layer is an N rich layer whose N content in a layer is larger than Ti content. Meanwhile, a TiN layer 14 which mainly functions to improve bonding property between the TiN layer 13 and an Au layer 15 is a Ti rich layer whose Ti content in a layer is larger than N content. The N rich TiN layer 13 which is the second layer functions as a diffusion barrier layer which prevents AlGaAs element decomposed by heat treatment from depositing in an electrode surface. Since N is incorporated in a layer richer than Ti, the layer is formed dense when compared with TiN in which N is poorer than Ti and an element which is thermally decomposed is effectively prevented from being diffused to an electrode surface. Thereby, wire bonding property can be improved. |
