| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of electrode pads and make possible highly fined electrode wiring by providing a separation region for separation to a semiinsulating compound semiconductor layer provided on a foundation and a block region containing a diffusion region. SOLUTION: A plurality of separation regions 22 for separation to a block region 23 (23a, 23b, 23c) which attains into a surface of a semiinsulating compound semiconductor layer from an n-type Alx Ga1-x As layer and contains the same number of diffusion regions 20 each are provided. A plurality of electrode wirings 32 connected through an electrode (hereinafter referred to as a discrete electrode) 26 to the diffusion region 20 inside all the block regions 23 are provided relating that one common electrode wiring corresponds to the diffusion region 20 chosen one from each block region 23. Since a method of connect one of the separate electrodes 26 inside each block region 23 to the electrode wiring 32, namely a matrix wiring method is adoped, an electrode pad for a discrete electrode can be reduced. A highly fined electrode wiring is realized in this way. |
