| 摘要 |
PROBLEM TO BE SOLVED: To judge quality of crystallinity of a P-N junction part, by grasping the degree of supersaturation at the time of epitaxial growth by using depth direction distribution of carrier concentration in the vicinity of the P-N junction part, from the surface side of an epitaxial wafer to the board side. SOLUTION: Carrier concentration of an epitaxial layer is changed by the amount of dopant captured in crystal at the time of growth. Under a stable growth condition, distribution of the carrier concentration in the depth direction of the epitaxial layer follows the intrinsic physical properties which elements constituting a crystal and elements turning to dopant have to the temperature at the time of growth. In the case of the growth condition wherein the degree of supersaturation is increased more than the necessary level, change is generated in the distribution of concentration. Quality of light emitting characteristics can be judged by measuring the distribution of carrier concentration in the vicinity of a P-N junction, in the state of an epitaxial wafer. |
