| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor nonvolatile memory device capable of reducing the writing time, and writing method therefore. SOLUTION: The semiconductor nonvolatile memory device has a memory cell array 13 in which memory cells storing data are arranged on the cross points of a plurality of word lines WL and a plurality of bit lines BL in a matrix formation, a row decoder 11 to which address signals are inputted and by which at least 2 word lines WL are selected, a latching circuit 12 which holds the word lines WL selected by the row decoder 11 and a page register 17 which receives the data of 1 page and holds them and outputs them to the memory cell array 13 through the bit lines BL. As the data of 1 page which are outputted from the page register 17 are written in the respective memory cells for a a plurality of pages which are connected to at least 2 selected word lines WL simultaneously, the writing time can be reduced.</p> |
