发明名称 PHOTOSENSITIVE RESIN COMPOSITION FOR EXPOSURE TO FAR UV RAY AND PATTERN FORMING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To form a pattern by using a chemically amplifying resist material which has high transparency for far UV rays of <220nm wavelengths and uses a photoacid producing agent having high photoreaction efficiency (photoacid producing efficiency) by incorporating a specified alkylsulfonium salt. SOLUTION: This photosensitive resin compsn. contains an alkyl sulfonium salt compd. of a specified structure as one component, and the photosensitive resin compsn. is used to form a pattern by irradiation of light. The alkylsulfonium salt as the structural element is expressed by formula. In formula, R<1> , R<2> are straight-chain or branched-chain alkyl groups having 1 to 8 carbon atoms (for example, R<1> , R<2> are methyl groups, ethyl groups, n-propyl groups, isopropyl groups, n-butyl groups, sec-butyl groups, tert-butyl groups, pentyl groups, hexyl groups, heptyl groups and octyl groups).
申请公布号 JPH10133371(A) 申请公布日期 1998.05.22
申请号 JP19970301785 申请日期 1997.11.04
申请人 NEC CORP 发明人 NAKANO KAICHIRO;MAEDA KATSUMI;IWASA SHIGEYUKI;HASEGAWA ETSUO
分类号 G03F7/004;C08K5/372;G03F7/029;H01L21/027;(IPC1-7):G03F7/029 主分类号 G03F7/004
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