PROCESS FOR THE PRODUCTION OF SEMICONDUCTOR DEVICE

摘要

A process for the production of a semiconductor device, which enables the practical use of a carbon fluoride film (hereinafter referred to as "CF film") as the interlayer insulator film. The deposition of a conductive film such as a TiN film (41) on a CF film (4) and the patternwise deposition of a resist film (42) on the film (41) are conducted successively, followed by the etching of the TiN film (41) with BCl3 gas or the like. Although the subsequent irradiation of the resulting wafer with O2 plasma makes not only the CF film but also the resist film (42) etched chemically, predetermined holes can be formed by virtue of the action of the TiN film (41) as a mask. Then, wiring is formed of aluminum or the like on the surface of the CF film (4). The TiN film (41) is effective in making the wiring and the CF film (4) adhere tightly to each other and serves as a part of the wiring. An insulator film made of SiO2 or the like may be used as the mask instead of the conductive film.