THIN FILM TRANSISTOR AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor which has an excellent ohmic characteristic between a source/drain electrode and a pixel electrode, and which is connected to a low resistor, by using a molybdenum as material of a connection surface of the source/drain electrode to the pixel electrode of indium tin oxide. SOLUTION: A gate electrode 2, a semiconductor layer 5 of an a-Si film, a channel protective layer 6, an n-type amorphous Si contact layer 7, and the like, are formed on a substrate 1. Then, a Ti film, an Al film, and Mo film are sequentially formed by sputtering using Ar gas, and the films are etched to form a source/drain lower-layer electrode (Ti) 21, a source/drain middle-layer electrode (Al) 22 and a source/drain upper-layer electrode (Mo) 23. An organic insulating film 12 having an opening is formed by photolithography, then an ITO(Indium Tin Oxide) film is formed on the organic insulating film 12. The ITO film is etched into a pixel electrode pattern as a pixel electrode 9.