| 摘要 |
PROBLEM TO BE SOLVED: To prevent the element emission power of an electron feed layer for a channel layer from deteriorating due to a heat treatment by forming a fate contact layer as a super-lattice composed of, at least, one pair of InAlAs layers each having specified thickness or more. SOLUTION: A gate contact layer 21 is formed as a super-lattice composed of, at least, one pair of InXAl1- XAs layer 21a and InYAl1- YAs layer 21b, each having a specified thickness or more; 0<X<1, 0<Y<1, X≠Y. Hence the gate contact layer 21 can be formed so that dislocations may occur within an allowable range and prevent the element emission power of a doped layer 5 from deteriorating due to a heat treatment, allowing various heat-treatments at sufficiently high temps. in a manufacturing process for a high electron mobility transistor HEMT. Thus elements superior in semiconductor characteristics can easily be produced.
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