| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor improved in thermodynamic stability by selecting a conductive layer and an insulating layer contg. a common element and not reacting with each other at desired temp. and depositing them in contact with each other. SOLUTION: A substrate support 112 is heated up to desired treating temp. within a range of 200 to 600 deg.C by an internal resistance coil or infrared lamp, a vacuum pump 140 evacuates a chamber 111 down to desired process pressure in a range of 0.1-100Torr, Ta pentoxide(dimethylamide) is fed in the chamber 111, together with a carrier gas, and a computer 139 operates NC air valves 124d, 126d, 128d and other gas feed valves. Ta pentoxide(dimethylamide) contacts the heated substrate 114 and decomposes to deposit a Ta nitride electrode layer, thereby defining a third electrode layer. Thus a capacitor and other semiconductor structure immune to bad influence of the annealing and other high temp. treatment are obtained. |
