| 摘要 |
PROBLEM TO BE SOLVED: To form an ultrafine resist pattern on a semiconductor substrate and to obtain a highly integrated semiconductor device by using a specified monodispersion polystyrene to form an ultrafine resist pattern. SOLUTION: When a polystyrene resist pattern is formed by exposure to beams of charge particles or neutral particles, a monodispersion polystyrene having low mol.wt. as <9000mol.wt. and almost 1mol.wt. dispersion degree is used to form an ultrafine resist patter. Namely, in the method to form a polystyrene resist pattern, the pattern side depends on the mol.wt., and therefore, the smaller the mol.wt. is, the smaller pattern size can be obtd, To solve this problem and to obtain a 10-nm order ultrafine resist pattern, it is effective to use a polystyrene having low mol.wt. and a small dispersion degree. |
