| 摘要 |
PROBLEM TO BE SOLVED: To permit a P layer formed on a wafer substrate by solid phase diffusion have high Zn surface concentration and make possible ohmic contact with a P electrode in a condition in which the P layer is extremely thin compared with the conventional case. SOLUTION: In this method, a diffusion preventing film 2 is pattern-formed on a wafer substrate 1, a Zn diffusion source film 3 is formed by simultaneously depositing Zn with plasma polymerization of hexamethyldisiloxane, the film 3 is covered with a diffusion preventing film 4, the workpiece is heated under atmospheric pressure, Zn is thermally diffused and a LED element is manufactured. At this time, a P layer formed on the wafer substrate 1 by solid phase diffusion is permitted to have high Zn surface concentration, and remarkably reduces its quantity of absorption as a P layer which make possible ohmic contact with a P electrode in extremely thin condition compared with the conventional case. |
