| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having storage electrodes having a wide surface area with the least number of steps. SOLUTION: An oxide film is formed on a polysilicon film 12 in contact holes and oxide film 9, a resist 14 is formed on other regions than storage electrode regions, and the oxide films 13, 9 are partly etched, using the resist 14 as a mask. A selectivity between the oxide film and Si is selected to leave the Si film 12. As the result, the top and part of the side of the Si film 12 are exposed through the resist 14. The resist 14 is removed, a polysilicon film 15 is formed on the surfaces of the oxide films 9, 13 and Si film 12. A resist 16 is coated on the surface of the Si film 15 and the resist 16 and Si film 15 only on the oxide film 13 are removed. The oxide films 13, 9 remaining between the Si film 15 to be storage electrodes are removed, a capacitance insulation film and polysilicon film are formed on the surface of the Si film 15 and plate electrodes are patterned. |
