| 摘要 |
PROBLEM TO BE SOLVED: To allow an easily oxidative and finely formable material to be used for a lower electrode and it improve the interface between the lower electrode and insulation film. SOLUTION: On a lower electrode 1, an insulation film 2 such as silicon nitride oxide, etc., is formed to block a metal from diffusing from a ferroelectric film 4 such as SrBi2 Ta2 O9 , etc., deposited thereon after providing the insulation film 2. This prevents the lower electrode from being oxidized. Then an upper electrode layer 5 is formed to result in a good condition of the interface between the lower electrode 1 and insulation film 2, the leak current lessens, and insulation film thickness is controllable. This allows an easily oxidative and finely formable material such as polysilicon, Ti, W, etc., to be used as a lower electrode material. |
