发明名称 RESIST COMPOSITION, FORMING METHOD OF RESIST PATTERN AND PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a compsn. which enables exposure in a deep UV wavelength region such as ArF laser light and has transparency, sensitivity, etching resistance and resolution and good adhesion property to a substrate by incorporating specified monomer units as the base resin. SOLUTION: This compsn. consists of a combination of a base resin of a film forming polymer which itself is insoluble with a basic soln., and a photoacid producing agent which produces acid as the result of exposure to radiation for imaging. In this method, the film forming polymer used as the base resin contains at least (A) a monomer unit I having carboxylic acid or phenol protected by protective groups which are selected from ester groups, ether groups, acetyl groups and ketal groups and which can be released by acid, and (B) a monomer unit II having ester groups or ether groups and containing a cyclic carbonate part. When the protective groups in the monomer unit I are released by the effect of acid, the polymer becomes soluble in a basic soln.
申请公布号 JPH10133377(A) 申请公布日期 1998.05.22
申请号 JP19960288524 申请日期 1996.10.30
申请人 FUJITSU LTD 发明人 NOZAKI KOJI;YANO EI;WATABE KEIJI;NAMIKI TAKAHISA;IGARASHI YOSHIKAZU
分类号 H01L21/3065;G03F7/004;G03F7/039;G03F7/40;H01L21/027;H01L21/302;(IPC1-7):G03F7/039;H01L21/306 主分类号 H01L21/3065
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