发明名称 METHOD AND DEVICE FOR CORRECTING EXPOSURE PATTERN, EXPOSURE MASK, EXPOSURE METHOD AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To accurately correct an exposure pattern without increasing the number of graphics. SOLUTION: In the case of transforming the exposure pattern by this correcting method in a lithographic stage so that a transfer image approximate to a desired design pattern P may be obtained; the visible outline of the desired design pattern P is divided based on a specified rule and plural evaluation points H are added to respective divided edges E. Next, the image of the exposure pattern after exposure is calculated by simulation, and a distance between each evaluation point H of each edge E and a position corresponding to each evaluation point H of the image after exposure is calculated. Then, the distance is inputted in a specified evaluation function and the position of each edge E is corrected based on the outputted value of the evaluation function so as to decide the exposure pattern after exposure.
申请公布号 JPH10133358(A) 申请公布日期 1998.05.22
申请号 JP19960286213 申请日期 1996.10.29
申请人 SONY CORP 发明人 TSUDAKA KEISUKE
分类号 G03F1/36;G03F1/72;G03F7/20;H01L21/027 主分类号 G03F1/36
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