| 摘要 |
PROBLEM TO BE SOLVED: To form a dielectric-metal interface superior in contact condition by forming an oxide dielectric film on a metal film such that a conductive oxide thin film is formed in the condition of a poor oxygen compsn. as an intermediate layer and the oxide dielectric film is deposited by changing the thin film to a conductive one. SOLUTION: On the top of an alumina multilayer substrate 1, a lower electrode 2 and dielectric thin film 3 are formed, a Pt upper electrode 4 is formed thereon, and a pattern of the electrodes 4, 2 and dielectric film 3 is formed to provide a thin film capacitor. A thin film resistor 10 is formed on the top of a resin layer 8. A wiring 5 is formed by the Cu plating. On the multilayer substrate, the wiring 5, upper electrode 5 of the thin film capacitor, air-core inductor 6 and microwave monolithic integrated circuit 7 are interconnected through through-holes 9 by the Cu plating. This reduces the leak current of the thin film capacitor and produces a low-noise high-gain amplifier module. |
