摘要 |
<p>PROBLEM TO BE SOLVED: To ash a resist at a high speed without giving any popping damage nor charge-up damage to the resist by ashing the resist, while the resist is placed on a heated sample stage after ashihg the resist in a state where the resist is raised from the sample stage with lift pins. SOLUTION: The sample-placing surface of a sample stage 4 is heated by means of a heating mechanism 5, and a sample S carried onto the stage 4 is raised to a prescribed height from the stage 4 by raising lift pins 6. When the sample S is raised, a hardened resist layer on the sample S is removed by a generating plasma P in a plasma chamber 1, while an ashing gas is supplied to the chamber 1. After a prescribed period of time has elapsed, the sample S is placed on the stage 4 by lowering the pins 6. When the sample S comes into contact, the temperature of the sample S quickly rises, and the remaining resist is removed at a high speed.</p> |