| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent occurrence of a void in an interlayer insulating film due to contraction of a silicide layer in a fabricating process of a gate electrode. SOLUTION: This polycide gate electrode comprises a gate pattern formed by stacking a polysilicon layer pattern 120, a silicide layer pattern 125, and a mask oxide film pattern 130, a contraction compensation oxide film 135 formed by a high temperature thermal oxidation process in bulk contraction parts on both faces of the silicide layer pattern 125, and a gate spacer 140a formed on the side walls of the gate pattern. Both of the contracted faces of the silicide layer pattern 125 in the gate pattern are filled with the contraction compensation oxide film 135, thereby compensating the contracted part of the silicide layer pattern 125.</p> |
