| 摘要 |
A static type random access memory device is rescued from a defective digit line pair by replacing it with a redundant digit line pair (RDLP) coupled with redundant memory cells (RM1 to RMm) , and a precharging unit (14) supplies current to all of the digit line pairs and the redundant digit line pair even if the defective digit line pair is replaced with the redundant digit line pair, wherein precharging transistors (Q11/ Q12) coupled with the defective digit line pair are forcibly turned off by applying a constant voltage level (GND) to the gate electrodes thereof upon the replacement so that leakage current does not flow from the defective digit line pair into a ground voltage source. <IMAGE> |
