| 发明名称 |
Process for the formation of functional deposited films |
| 摘要 |
<p>A Photovoltaic element comprises a first semiconductor of a first-conductivity type, a first i-type semiconductor formed by microwave plasma, a second i-type semiconductor formed by high-frequency plasma and a second semiconductor of a conductivity type reverse to the first-conductivity type, wherein the second semiconductor is formed by plasma doping. <IMAGE></p> |
| 申请公布号 |
EP0609104(B1) |
申请公布日期 |
1998.05.20 |
| 申请号 |
EP19940300674 |
申请日期 |
1994.01.28 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
FUJIOKA, YASUSHI;OKABE, SHOTARO;KANAI, MASAHIRO;TAMURA, HIDEO;YASUNO, ATSUSHI;SAKAI, AKIRA;HORI, TADASHI |
| 分类号 |
H01L21/205;H01L31/075;H01L31/20;(IPC1-7):H01L31/20;H01L31/039 |
主分类号 |
H01L21/205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
