| 摘要 |
FIELD: solid electron device based on quantum effects. SUBSTANCE: in sample of semiconductor material which de Broglie wave length exceeds constant of lattice travel of electrostatic potential is set in surface volume to form quantum wire which length is chosen to exceed length of electron free path. Clear electric contacts to quantum wire are formed at distance not exceeding length of electron free path and quantizing crossed fields are applied to form interference element over length of section of quantum wire between tunnel-clear contacts. Amplitude of electric field is chosen proceeding from number of modes excited in quantum wire, modulation coefficient of current of interference element is found and length of interference element corresponding to achievement of maximum value of modulation coefficient of current is established . Narrow-slit semiconductor, for instance cadmium-mercury-tellurium is used as semiconductor with surface volume of film of this semiconductor epitaxially deposited on cadmium telluride film. EFFECT: increased efficiency of process. 7 cl, 7 dwg, 3 tbl |
