发明名称 |
Semiconductor circuit with internal voltage supply circuit for DRAM, SRAM |
摘要 |
The internal circuit is coupled to an internal supply node (2) and carries out a preset operation. A first internal supply (300) is coupled to an external supply node (1), receiving the external supply voltage (ext. VCC), for the supply of the internal node with an internal supply voltage (int. VCC) lower than the external one. A second internal supply (303, 304) is coupled to the external supply node for feeding the internal supply voltage to the internal node. A detector reacts to control signals supplied externally in a preset timing, picks-up the test mode, and generates a first test mode signal a (de)activator (304-306) reacts to the test mode signal to control the second internal supply. |
申请公布号 |
DE19727789(A1) |
申请公布日期 |
1998.05.20 |
申请号 |
DE1997127789 |
申请日期 |
1997.06.30 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP |
发明人 |
ITOU, TAKASHI, TOKIO/TOKYO, JP |
分类号 |
G11C11/407;G11C5/14;G11C11/401;G11C11/4074;G11C11/413;G11C29/14;G11C29/50;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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