| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the rewrite resistance, without lowering the write efficiency. SOLUTION: On a main surface 2a of a semiconductor substrate 2 high-concn. impurity regions 3a, 3b are formed to define channel forming regions 2b. Low- concn. impurity regions 4a are formed beneath the high-concn. impurity regions 3a to be drains. The regions 3a located at the channel forming regions 2b have side ends extending to these regions 2b more than those of the low-impurity regions 4a located at the regions 2b. P<+> impurity regions 5 are formed to surround the impurity regions 3a, 4a.</p> |
