发明名称 CONTINUOUS DEPOSITING METHOD ON WAFER WITHOUT USE OF DUMMY WAFER
摘要 <p>PROBLEM TO BE SOLVED: To perform deposition continuously without requiring any dummy wafer by repeating a step for depositing at a constant thickness ratio, until the final slot wafer in a run cassette is loaded to a distribution head and a step for loading the wafer in a next slot. SOLUTION: A run cassette 23 is loaded to a cassette station, and then a first group of four wafers are distributed to distribution heads E through A followed by loading of second group of single wafer. Subsequently, deposition is performed stepwise at a constant thickness ratio. Thereafter, each wafer is loaded to a following distribution head and the first wafer loaded to the distribution head E is unloaded, cooled gradually at a cooling station and received in the relevant slot of the run cassette. After loading a second wafer in the following slot to the distribution head A, deposition is performed and the steps are repeated until the final slot wafer in the run cassette 23 is loaded to the distribution head A.</p>
申请公布号 JPH10125668(A) 申请公布日期 1998.05.15
申请号 JP19970051969 申请日期 1997.03.06
申请人 SAMSUNG ELECTRON CO LTD 发明人 CHOI JIN-BANG
分类号 H01L21/205;H01L21/02;H01L21/31;H01L21/316;H01L21/68;(IPC1-7):H01L21/31 主分类号 H01L21/205
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