| 摘要 |
PROBLEM TO BE SOLVED: To lengthen easily the laterial distance of a diffused region, which is formed directly under an electrode, without performing a high-temperature and long-time drive-in. SOLUTION: A base body part 14 and a gate electrode 13 having the side parts, which are thinner than the thickness of this base body part 14, are formed on a gate insulating film and an impurity ion implantation is performed toward the gate insulating film and the surface of the electrode 13, whereby impurities are made to penetrate both side parts of the electrode 13 to dope the impurities to the surface of a semiconductor substrate 11. After this, an annealing treatment is performed, whereby the impurities doped to the surface of the substrate 11 are diffused in the substrate 11. Thereby, the diffusion length of the impurity diffused region is made long.
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