| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory having a redundant circuit for relieving a fault cell even after packaging a semiconductor by providing an automatic block mapping function for relieving the fault cell. SOLUTION: The semiconductor memory comprises a flag cell array 22 for storing block fault state information of a fault row block existing in a main memory cell array 10 for storing data, and a flag decoder 26 for generating a repair block select signal for substituting for the fault row block with the flag cell fault state information. Thus, the fault row block exceeding number of a redundant length arrays 12 is substituted for most significant block of the array 10 according to the repair block select signal. A user uses an address of residual main row block except the most significant row block substituted in the array 10. |
