| 摘要 |
PROBLEM TO BE SOLVED: To obtain a superior TiN film as a diffusion barrier layer by performing sputtering under a first condition that reactive sputter of high melting point metal nitride is generated, when a high melting point metal target is used, and performing sputtering end a second condition that reactive sputter is not generated. SOLUTION: After an insulating layer 2 is deposited on an Si substrate 1, a contact hole 4 is so formed that a region 3 on the substrate 1 is exposed. A diffusion barrier layer 5 composed of TiN is formed by a reactive sputtering process using a TiN target. In this case, after the TiN has been sputtered by first plasma power, wherein TiN reactive sputter is generated when a pure Ti target is used on the substrate 1, sputtering is performed by second plasma power, wherein TiN reactive sputter is not generated when the pure Ti target is used. Thereby a high melting point metal nitride film of high density which is suitable for the diffusion barrier layer 5 of the glue layer of a W layer can be obtained. |
