| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photoelectric conversion element having a more excellent conversion efficiency than the conventional one by forming a first and second amorphous or crystalline semiconductor layers; the second layer formed on the first one and contg. a rare earth metal element. SOLUTION: After depositing silicon dioxide on a glass substrate, a transparent indium-tin oxide ITO electrode is deposited. On this electrode a p-type silicon carbide layer is deposited and implanted with Nd or Er ions. An amorphous Si layer contg. little impurity is deposited on an amorphous silicon carbide layer and implanted with an n-type impurity ion to form an n-type amorphous Si layer to be an Ohmic region. On this layer an Al electrode is formed to complete a photoelectric conversion element. Since the amorphous Si carbide layer contains a rare earth metal element, the electron density in a space charge region is lowered to reduce the carrier recombination. |
