| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a semiconductor integrated circuit device, by increasing margin of laser beam energy at the time of cutting a fuse for defect relief for relieving an imperfect circuit. SOLUTION: A semiconductor integrated circuit device has a memory cell region A and a peripheral circuit region B. In the memory cell region A, memory cells of DRAM's which are constituted of MISFET's Qc and storage capacities SN are formed, in an array type, on a semiconductor substrate 1. In the peripheral circuit region B, peripheral circuits are formed. The thickness of an upper layer insulating film 14b of an insulating film 14 between wiring lower layers of the semiconductor integrated circuit device is formed thinner than the film thickness in the peripheral circuit region B except a fuse part B2 , in the fuse part B2 wherein a fuse 12 is formed. An upper layer insulating film 14b of the fuse part B2 is simultaneously etched and thinned, in a self etch-back process wherein the upper layer insulating film 14b of the memory cell region A is etched back. |
