| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a semiconductor memory, in particular an RAM or an ROM, in which erroneous function of the input circuit due to a noise is prevented through a delay means at the time of a low temperature and a high power supply voltage and a countermeasure against the noise is realized without sacrifice of an operating speed at the time of high temperature and low power supply voltage. SOLUTION: In an input circuit 2 connected with an input terminal 1, a temperature detection circuit 4 selects a long delay at the time of low temperature and a short or zero delay at the time of high temperature for a delay means 3 which can select the amount of delay. Alternatively, the temperature detection circuit 4 selects, in the input circuit 2 connected with the input terminal 1, a long delay at the time of high power supply voltage and a short or zero delay at the time of low power supply voltage for the delay means 3 which can select the amount of delay.</p> |
