MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method wherein change of the resistance value of a first polysilicon layer pattern which forms a lower part electrode of a capacitor and a polysilicon resistor can be remarkably reduced and processes can be simplified. SOLUTION: After a first polysilicon layer 13 is formed, a bottom oxide film 15 is formed on the first polysilicon layer 13 by omitting formation of a buffer oxide film. After impurities are ion-implanted in the first polysilicon layer 13 via the bottom oxide film 15, a first silicon nitride film 16 is formed on the bottom oxide film 15. After that, the first silicon nitride film 16, the bottom oxide film 15 and the first polysilicon layer 13 are patterned, a lower electrode of a capacitor, a dielectric film, a polysilicon resistor and an insulating film on it are formed.