| 摘要 |
PROBLEM TO BE SOLVED: To form an insulating layer between metal layers by supplying a source gas containing fluorine and carbon, along with a source gas containing a silicon oxide, into a dual-frequency high-density plasma reaction chamber, thereby depositing a fluorocarbon/silicon oxide on a substrate. SOLUTION: A substrate made of a thermally stable substance is placed in a dual-frequency plasma reaction chamber, and a source gas is fed through a distributor 24 into a vacuum chamber 20. Argon gas and oxygen are then injected into the vacuum chamber 20 and settled. After they are fixed at a desired temperature through a temperature regulator 35, perfluorobenzene containing fluorine and carbon is introduced as the source gas for fluorocarbon and hexamethyldicyloxane is introduced as the source gas for SiO2 , for example. After the pressure is settled, a specified frequency is applied to an upper electrode from a first RF modulator 24 of the reactor and a specified frequency is applied to a lower electrode from a second high-frequency modulator 34.
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