| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent electrons emitted from a thin film from hitting a gate electrode, to enhance the electron utilization efficiency, and to prevent increase of the power consumption and lowering of the reliability by surrounding an electron emitting layer with the first electrode, forming the second electrode via an insulating layer, forming an electron emitting layer on it to obtain a substrate, and forming the substrate into a spherical simulated structure with a spherical surface or steps. SOLUTION: Single or multiple rectangular recesses 1a are formed on a metal or semiconductor substrate 1, and projections protruded upward from the opening edges of the recesses 1a are used as beam forming electrodes 2. An insulating layer 3 is formed on each beam forming electrode 2, and a gate electrode 4 made of a metal material of a thin film or a thick film is laminated on it. The bottom face of each recess 1a of the substrate 1 is formed into a spherical shape, and an electron emitting layer 5 made of a material having a low work function is formed on the spherical bottom face of the recess 1a. A fine cold cathode 11 is formed with the electron emitting layer 5, beam forming electrode 2, insulating layer 3, and gate electrode 4.</p> |
