发明名称 POWER SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the inductance of a module by mounting even number of semiconductor elements on an insulation substrate, providing a circuit unit for parallel operation of even number of insulation substrates, and disposing module outer terminals corresponding to the circuit unit to thereby operate in parallel from outside the module. SOLUTION: Even no. of semiconductor elements 101, 102 are mounted on each of DBC-AlN substrates 103. An IGBT unit to be operated in parallel through terminal wirings in the module is composed of even number of DBC-AlN substrates 103. The IGBT units are wired in the module and operated in parallel. This structure ensures that even a large-capacity module with many semiconductor elements is operative with keeping these elements balanced enough to be switched at high speed and enhances the short-circuit resistance. This also reduces the inductance of the module and makes uniform the solder reliability for connecting the terminals to the insulation substrates even in a large-capacity and large-size module.
申请公布号 JPH10125856(A) 申请公布日期 1998.05.15
申请号 JP19960275841 申请日期 1996.10.18
申请人 HITACHI LTD 发明人 KOIKE YOSHIHIKO;SHIMIZU HIDEO;KUSHIMA TADAO;SONOBE YUKIO;TANAKA AKIRA;INOUE KOICHI;SAITO RYUICHI
分类号 H01L25/07;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L25/07
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