| 摘要 |
PROBLEM TO BE SOLVED: To improve the optical efficiency by providing a first pin-junction i-type semiconductor layer having an amorphous Si, second semiconductor layer having a fine crystal Si, and third semiconductor layer having an amorphous Si-Ge or fine crystal Si-Ge, starting from the light incidence side. SOLUTION: A stacked photosensor comprises three laminated pin-junctions; first, second and third pin-junctions 150, 140, 130, starting from the light incidence side. The three pin-junctions are laminated on a lower electrode 101 formed on a substrate 100 and transparent electrode 115 and collector electrode 116 are formed on the topmost part. The first pin-junction i-type semiconductor layer 113 uses an amorphous Si, second i-type semiconductor layer 110 uses a fine crystal Si, and third i-type semiconductor layer 105 uses an amorphous Si-Ge or fine crystal Si-Ge. This improves the photoelectric conversion efficiency. |
