发明名称 |
MULTIPLE SIMULTANEOUS PROCESSING METHOD FOR SEMICONDUCTOR SILICON SAMPLE RADIOACTIVATION ANALYSIS |
摘要 |
PROBLEM TO BE SOLVED: To measure radiation of an objective element with high efficiency and high sensitivity by exposing an imaging plate for a radioactivation element applying plane surface, forming a radioluminographic image from that data and comparing the density of a sample image at a specified position. SOLUTION: For example, 21 (3 row×7 column) evaporation cases are provided wherein a unit cup-like case A made of transparent quartz glass has a circulator lower opening 2 having inside diameter of 5mm and a fluorescing PFA plate 5 of 1mm thick is placed on a copper plate 6. The PFA plate 5 serves as a radioactivity element applying plate. Two right end cases A in such an evaporation case is added with 2 grade standard ship liquid and another case is added with a liquid from a sample 20μm etching and then the copper plate 6 is heated at 60-70 deg.C to evaporate carbon tetrachloride thus forming an array of residual pattern on the PFA plate 5. The PFA plate 5 is then exposed using an imaging plate and a radioluminographic image obtained from that data is analyzed and then a comparison is made with the radioactivity of a standard sample having known quantity of Cu thus determining the quantity of Cu of each sample chip.
|
申请公布号 |
JPH10123069(A) |
申请公布日期 |
1998.05.15 |
申请号 |
JP19960297732 |
申请日期 |
1996.10.21 |
申请人 |
PURE RETSUKUSU:KK |
发明人 |
MURAOKA HISASHI;NOZAKI TADASHI |
分类号 |
G01N23/221;H01L21/66;(IPC1-7):G01N23/221 |
主分类号 |
G01N23/221 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|