发明名称 MULTIPLE SIMULTANEOUS PROCESSING METHOD FOR SEMICONDUCTOR SILICON SAMPLE RADIOACTIVATION ANALYSIS
摘要 PROBLEM TO BE SOLVED: To measure radiation of an objective element with high efficiency and high sensitivity by exposing an imaging plate for a radioactivation element applying plane surface, forming a radioluminographic image from that data and comparing the density of a sample image at a specified position. SOLUTION: For example, 21 (3 row×7 column) evaporation cases are provided wherein a unit cup-like case A made of transparent quartz glass has a circulator lower opening 2 having inside diameter of 5mm and a fluorescing PFA plate 5 of 1mm thick is placed on a copper plate 6. The PFA plate 5 serves as a radioactivity element applying plate. Two right end cases A in such an evaporation case is added with 2 grade standard ship liquid and another case is added with a liquid from a sample 20μm etching and then the copper plate 6 is heated at 60-70 deg.C to evaporate carbon tetrachloride thus forming an array of residual pattern on the PFA plate 5. The PFA plate 5 is then exposed using an imaging plate and a radioluminographic image obtained from that data is analyzed and then a comparison is made with the radioactivity of a standard sample having known quantity of Cu thus determining the quantity of Cu of each sample chip.
申请公布号 JPH10123069(A) 申请公布日期 1998.05.15
申请号 JP19960297732 申请日期 1996.10.21
申请人 PURE RETSUKUSU:KK 发明人 MURAOKA HISASHI;NOZAKI TADASHI
分类号 G01N23/221;H01L21/66;(IPC1-7):G01N23/221 主分类号 G01N23/221
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