METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To manufacture an SiC semiconductor device with good accuracy by improving the pattern accuracy of a deposited oxide film. SOLUTION: The edges of both sides of an SiC substrate 100 before the formation of MOS FETs, are abraded at an angle of abut 30 degrees and a width of over 500μm. Although the irregular deposition of an oxide film is generated on the edges of the SiC substrate 100 in a process for forming the MOSFETs, the abrasion removes the abnormal bulge of the oxide film so as to make good pattern accuracy of the oxide film.