| 摘要 |
<p>A novel method for the synthesis of Group III nitride crystals is disclosed. The method contemplates the reaction of a liquid form of the Group III nitride metal with active nitrogen. The active nitrogen may be generated by a plasma or the thermal decomposition of ammonia and may be neutral, ionic, excited or a mixture thereof. Using the method of the present invention, the crystalline Group III nitride can be grown at pressures of one atmosphere and below. Polycrystalline films grown by this method are of sufficient quality to show luminescence at room temperature.</p> |
