发明名称 |
METHOD FOR MAKING A THIN FILM ON A SUPPORT AND RESULTING STRUCTURE |
摘要 |
The invention concerns a method for making a thin film on a support consisting in the following: a step of ionic implantation for delimiting the thin film in a substrate, the purpose of the ionic implantation being to produce a layer of micro-cavities in the substrate; a step of fixing by close contact the substrate on a support element and a step of thermal treatment for bringing the layer of micro-cavities to a temperature suitable for causing a cleavage along this layer. At least one of the elements, substrate or support, is bevelled before the thermal treatment so as to preserve the close contact between the substrate and the support despite the stresses induced in the elements and resulting from the difference in their thermal expansion coefficient. |
申请公布号 |
WO9820543(A2) |
申请公布日期 |
1998.05.14 |
申请号 |
WO1997FR01969 |
申请日期 |
1997.11.04 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;ASPAR, BERNARD;BRUEL, MICHEL;BARGE, THIERRY |
发明人 |
ASPAR, BERNARD;BRUEL, MICHEL;BARGE, THIERRY |
分类号 |
H01L21/265;H01L21/02;H01L21/304;H01L21/762;H01L27/12 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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