SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

摘要

A semiconductor integrated circuit device which is provided with a protective element of a thyristor structure for protecting an internal circuit from positive overvoltage, and a protective element consisting of a diode (D1) for protecting the internal circuit from negative overvoltage, between an external terminal (2) and earth potential (GND) so as to remove the difference in ESD resistance caused by the polarity of overvoltage applied to the external terminal and improve the ESD resistance to both positive and negative overvoltage of the device.