Process for fabricating discrete electronic elements

摘要

The method uses a silicon on isolator substrate strengthened by an epitaxial layer with a pocket (6) formed by anisotropic etching in the first silicon layer (1), tapering towards the isolator layer (2), e.g. a silicon nitride layer, and extending up to the isolator layer. On the side walls (7) of the pocket an insulation layer is formed and an area of the isolator layer bordering the pocket is removed. By the last procedure a part of the second silicon layer (3) separated from the first by the isolator layer is exposed. The active structure below the area adjoining the pocket removed or to be removed is formed in the second silicon layer and on the insulation layer and the active element a contact layer (10) is formed to provide contact with the active structure.