| 摘要 |
Contamination on semiconductor wafers is eliminated to perform a drying step quickly, thereby improving productivity. There is provided a method of performing vapor phase etching on semiconductor wafers. The method comprises the steps of etching the semiconductor wafers by introducing a reactive gas into the reaction chamber, restoring the pressure in the reaction chamber to the atmospheric pressure by introducing an inert gas into the reaction chamber, cleaning the semiconductor wafers, drying the semiconductor wafers, and introducing an alcoholic gas into the reaction chamber. The inner wall of the reaction chamber is constantly maintained at a predetermined temperature in the range from 50 DEG C to 80 DEG C. Alcohol having a boiling point 10 DEG C or more lower than the predetermined temperature is chosen. The use of an inert gas prevents the occurrence of a water mark during a spin drying process. Further, the alcoholic gas selectively acts only on water droplets on the inner wall surface of the chamber to prevent contamination due to organic substances and to allow the time required for drying to be shortened by a factor of about ten. <IMAGE>
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