Semiconductor device isolation region production

摘要

A process for producing a semiconductor device isolation region involves (a) forming a first insulation layer (11) with different widths in various regions on a substrate; (b) forming trenches (13a, 13b) with different widths in the substrate using the first insulation layer; (c) forming a second insulation layer in the trenches and on the first insulation layer; (d) exposing portions of the first insulation layer by etching the second insulation layer; and (e) wet etching the first insulation layer and the non-etched portions of the second insulation layer.