| 摘要 |
<p>The present invention realizes a manufacturing method of bipolar transistor allowing to omit a photolithographic process of the emitter electrode polysilicon and to measure the characteristics of the transistor before forming metal electrodes. The present invention discloses a diffusion check transistor within a wafer for massproducing the bipolar transistor having the same structure and the same electrical characteristics. The diffusion check transistor has collector probe opening 201 of a size which allows a probe needle to contact to the collector electrode in the insulated region for measurement, emitter opening 301 of a size which allows the probe needle to contact to emitter electrode positioned in the region which adjoins to the preceding region beyond the insulation wall, a trench to bridge between emitter opening 301 and emitter region 13, burying emitter electrode polysilicon in the trench to connect them electrically, and base opening 401 of a size of said opening 301 in an adjoining region. So that the diffusion transistor allows to measure the diffusivity of the transistor before forming the metal electrodes. <IMAGE> <IMAGE></p> |
