发明名称 High planarity, low CTE base and method of making the same
摘要 <p>The present invention relates to a system and method for performing reliability screening on semi-conductor wafers and particularly to a highly planar burn in apparatus and method for uses including wafer level burn-in (WLBI), diced die burn-in (DDBI), and packaged die burn-in (PDBI). The burn-in system includes a burn-in substrate with a planar base. a temporary Z-axis connecting member, and a Z-axis wafer level contact sheet electrically coupled to one another for screening wafers, diced die, and packaged electronic components, their assembly and use. <IMAGE></p>
申请公布号 EP0841695(A2) 申请公布日期 1998.05.13
申请号 EP19970308877 申请日期 1997.11.05
申请人 W.L. GORE & ASSOCIATES, INC. 发明人 BUDNAITIS, JOHN J.
分类号 G01R31/26;G01R1/073;G01R31/28;H01L21/66;H01L23/13;H01L23/14;(IPC1-7):H01L23/13 主分类号 G01R31/26
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