发明名称 |
Semiconductor laser device for use as a light source of an optical disk or the like |
摘要 |
A buffer layer composed of an n-type semiconductor layer, a cladding layer composed of an n-type semiconductor layer, and an active layer are formed sequentially on an n-type semiconductor substrate. On the active layer, there are formed a first optical guiding layer composed of a p-type semiconductor layer including a loss varying layer composed of a p-type semiconductor layer having a bandgap smaller than that of the active layer and a second optical guiding layer composed of a p-type semiconductor layer in this order. On the second optical guiding layer, there is formed a third optical guiding layer composed of a p-type semiconductor layer extending in a stripe. On both sides of the third optical guiding layer on the second optical guiding layer, there are formed current blocking layers which become transparent to a lasing light generated in the active layer composed of the n-type semiconductor layer.
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申请公布号 |
US5751756(A) |
申请公布日期 |
1998.05.12 |
申请号 |
US19960707566 |
申请日期 |
1996.09.04 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
TAKAYAMA, TORU;IMAFUJI, OSAMU;YURI, MASAAKI;KUME, MASAHIRO;YOSHIKAWA, AKIO |
分类号 |
H01S5/20;H01S5/223;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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