| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for enhancing the hydrogenation of oxide- encapsulated materials, resulting in a significant decrease in hydrogenation time by forming an injection layer having a low reflectivity of monatomic hydrogen on the oxide-encapsulated material and subsequently hydrogenating the material with an atomic hydrogen source such as a hydrogen plasma. SOLUTION: This method for enhancing the hydrogenation of a material encapsulated by an oxide comprises forming a 5-7nm thick injection layer having a low reflectivity of monatomic hydrogen and comprising at least one selected from the group consisting of Au, Pt, hydrogenated amorphous silicon and polysilicon on the surface of an oxide-encapsulated material and subsequently hydrogenating the material with an atomic hydrogen source such as a hydrogen plasma. The diffusion of the hydrogen from a metal having a high electron concentration into the oxide is increase in a metal low in the solubility of the hydrogen, and the hydrogenation of the lower side material can similarly be increased.
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