| 摘要 |
PROBLEM TO BE SOLVED: To form an ink supplying inlet having a fluid passage resistance with high accuracy on a silicon single-crystal substrate. SOLUTION: A first etching pattern P1 to be a pressure generating chamber and a second etching pattern P2 are formed on a silicon single-crystal substrate with an ink supply inlet therebetween such that a width of the second etching pattern P2 is smaller than that of the first etching pattern P1 as W1-ΔW0 and is placed at an inner side of the boundary line S of the first one. Since the second etching pattern P2 is placed at the inner side of the boundary line S of the first etching pattern P1, the etching of a region to be the ink supply inlet is stopped at the width W1 of the first etching pattern P1.
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