发明名称 Ion beam processing apparatus
摘要 When neutralized plasma is generated, the cylindrical electrode 8 is set at a negative potential against the processing chamber 23 by the DC power source 18, so that ions 23 in the neutralized plasma can be collected at the cylindrical electrode 8. Electrons 24 equal to the collected ion charge can be supplied uniformly toward the ion beam 25. Therefore, by allowing the cylindrical electrode to collect ions, the ion collection area can be spread easily, and only by generating neutralized plasma of low density, a sufficient volume of ions can be collected surely from the plasma and a sufficient volume of electrons can be supplied to the ion beam 25 at the same time.
申请公布号 US5750987(A) 申请公布日期 1998.05.12
申请号 US19960636974 申请日期 1996.04.24
申请人 HITACHI, LTD. 发明人 ICHIMURA, SATOSHI;SATO, TADASHI;KOBAYASHI, KENZO;OHISHI, SHOTARO;OONUKI, HISAO
分类号 H05H1/46;C23F4/00;H01J27/16;H01J27/18;H01J37/02;H01J37/08;H01J37/30;H01J37/305;H01L21/302;H01L21/3065;(IPC1-7):H05H3/00 主分类号 H05H1/46
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